KR 10-2019-0036909

High stacked 3D flash memory based on ferro. Dielectric material

[Technical field]
In 3D flash string structure, ferro. dielectric material is used instead of ONO memory component, For it, string operation method and multi-bit driving method is newly presented. This technology provides performance of 100X higher, low power of under 50% compared to the conventional method.

Related family IP Lists

– KR 10-2019-0036909
– KR 10-2019-0090736
– KR 10-2019-0088071

  • New scaling cell for 3D flash memory
    : Ferro dielectric material in string
    cell structure