PCT/KR2019/009786

[Title]
Two terminal phase change memory element and operation method thereof

[Technical field]
2 terminal phase change memory device and its operation are presented. The device structure is composed of middle P semiconductor layer, which is phase change material, and N+ semiconductor layers on each side. P type PCM is used as a memory component, and no additional switching device is need.

Related family IP Lists

– PCT/KR2019/009786
– PCT/KR2019/006229
– KR 10-2018-0103693
– KR 10-2018-0135268
– KR 10-2018-0022893
– KR 10-2018-0076372
– KR 10-2018-0059057
– KR 10-2018-0061256
– KR 10-2018-0164317

  • No additional selector
    due to self normally off
    function in N+/P/N+ junction
  • No additional selector
    due to self normally off
    function in P/N junction