Yun Heub Song received his M.S. degree in electronic engineering from Hanyang University, Seoul, Korea, in 1992, and his Ph.D. degree in intelligent mechanical engineering from Tohoku University, Sendai, Japan, in 1999. He is currently a Professor in Electronic Engineering, Hanyang University, Seoul, Korea. He has researched semiconductor devices and circuit design for more than 30 years at the Semiconductor R&D Center, Samsung Electronic Co. and Hanyang University, Korea. When Prof. Song was working at Samsung, he was responsible for the device and product development of Flash memory as a vice-president, and developed 256Mb and 512Mb NOR Flash memory in 2000–2003. After moving to Hanyang University in 2008, Korea, he served as a vice-dean from 2011 to 2013 and dean from 2017 to 2018, College of Engineering. His research interests include device reliability modeling, device characterization, novel device structures and architecture for memory and logic applications, circuit design and algorithms for low power and high speed, and sensor systems based on semiconductor technology. In special, he has patents for memory device of more than 100 including flash memory patents of 40. He have focused
the research of new device and architecture in a high step 3D flash memory and X-point array technology.

Bong-seok Kim is a logic semiconductor process integration expert with more than 30 years of experience. He received the B.S. and M.S. degrees in metallurgical engineering from Hanyang University, Seoul, Korea. He served as a visiting scholar at Stanford University, where he was interested in the dual work function metal research and integration. He worked as a owner of advanced logic process and device integration at Samsung Semiconductor R & D for 26 years. He was Vice President of Samsung System LSI TD Center, where he successfully developed and produced 32, 28nm HK/MG and 14nm 3D FinFET technology. He also has a lot of experience in how to describe and validate technologies such as process flow and device performance boost up, IP design optimization, test pattern design, key modules (Fin, Gate, Epi, HK / RMG, Epi, CNT and BEOL) and yield. Nowadays, the current leading logic technology node is 7nm, which is in production. His current interests are sub-3nm device (GAA, CFET), 3D integration and next memory device. He also gave several lectures for logic semiconductor process and device as a professor of Industrial-Academic Cooperation at a Sung Kyun Kwan University. He holds 15 semiconductor manufacturing patents and has written 12 papers.

In-Ho Nam received the B.S. and M.S. degrees in physics from Kyungpook National University, Taegu, Korea, in 1985 and 1987, respectively, and the Ph.D. degree in electrical engineering from Seoul National University, Seoul, Korea, in 2001. From 1987 to 2011, he was with Samsung Electronics Company, Ltd., Kiheung, Korea, where he worked in the area of process integration for DRAM. He has developed and transferred to manufacturing several generations of DRAM technology. From 2011 to 2017 he was with Samsung Display Company, Ltd., Chun-an, Korea, as a Group Reader in process integration and yield enhancement for OLED. From 2017 to 2019, He was with Dongwoo Fine-Chem Co. Ltd., as an Executive Advisor. He is currently a Professor of Industry-University cooperation in Electronic Engineering, Hanyang University, Seoul, Korea.

Dr. Nam received the Grand Prize of Samsung Technology Award for developing the world’s 1st 256-M DRAM in 1994, He has served on the Technology Committees of the Korean Society of Semiconductor & Display Technology since 2017.